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Theoretical polariz...
Abstract
Ämnesord
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- In quantum technologies, point defects in semiconductors are becoming more significant. Understanding the frequency, intensity, and polarization of the zero phonon line is important. The last two properties are the subject of this paper. I present a method for calculating these properties and show the importance of using wave functions from both the ground and excited state. The validity of this method is demonstrated on the divacancy in 4H-SiC. Here, the calculated polarization and radiative lifetimes are in excellent agreement with experimental measurements. In general, this method can help to identify point defects and estimate suitable applications.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- density functional theory
- photoluminescence
- Point defects
- zero phonon line
- Excited states
- Phonons
- Polarization
- Silicon carbide
- Wave functions
- Wide band gap semiconductors
- Defects in semiconductors
- Divacancies
- Quantum technologies
- Radiative lifetime
- Zero phonon lines
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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