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Dense Ti0.67Hf0.33B1.7 thin films grown by hybrid HfB2-HiPIMS/TiB2-DCMS co-sputtering without external heating

Bakhit, Babak, 1983- (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
Mráz, Stanislav (author)
Materials Chemistry, RWTH Aachen University, Aachen, Germany
Lu, Jun, 1962- (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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Rosén, Johanna, 1975- (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
Schneider, Jochen M. (author)
Materials Chemistry, RWTH Aachen University, Aachen, Germany
Hultman, Lars, Professor, 1960- (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
Petrov, Ivan, 1949- (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,Materials Research Laboratory and Department of Materials Science, University of Illinois, Urbana, IL, USA; Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan
Greczynski, Grzegorz, 1973- (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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 (creator_code:org_t)
Elsevier, 2021
2021
English.
In: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 186
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • There is a need for developing synthesis techniques that allow the growth of high-quality functional films at low substrate temperatures to minimize energy consumption and enable coating temperature-sensitive substrates. A typical shortcoming of conventional low-temperature growth strategies is insufficient atomic mobility, which leads to porous microstructures with impurity incorporation due to atmosphere exposure, and, in turn, poor mechanical properties. Here, we report the synthesis of dense Ti0.67Hf0.33B1.7 thin films with a hardness of ∼41.0 GPa grown without external heating (substrate temperature below ∼100 °C) by hybrid high-power impulse and dc magnetron co-sputtering (HfB2-HiPIMS/TiB2-DCMS) in pure Ar on Al2O3(0001) substrates. A substrate bias potential of −300 V is synchronized to the target-ion-rich portion of each HiPIMS pulse. The limited atomic mobility inherent to such desired low-temperature deposition is compensated for by heavy-mass ion (Hf+) irradiation promoting the growth of dense Ti0.67Hf0.33B1.7.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Keramteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Ceramics (hsv//eng)

Keyword

Thin films
Borides
Low-temperature sputter deposition
Hybrid HiPIMS/DCMS
Hardness

Publication and Content Type

ref (subject category)
art (subject category)

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