Search: onr:"swepub:oai:DiVA.org:liu-173012" >
Memory Devices via ...
Memory Devices via Unipolar Resistive Switching in Symmetric Organic-Inorganic Perovskite Nanoscale Heterolayers
-
- Yu, Xianxi (author)
- Fudan Univ, Peoples R China
-
- Shen, Tangyao (author)
- Fudan Univ, Peoples R China
-
- Zhu, Chunqin (author)
- Fudan Univ, Peoples R China
-
show more...
-
- Zeng, Qi (author)
- Shanghai Univ Engn Sci, Peoples R China
-
- Yu, Anran (author)
- Fudan Univ, Peoples R China
-
- Liu, Shaobo (author)
- Fudan Univ, Peoples R China
-
- Yi, Ruichen (author)
- Fudan Univ, Peoples R China
-
- Weng, Zhenhua (author)
- Fudan Univ, Peoples R China
-
- Zhan, Yiqiang (author)
- Fudan Univ, Peoples R China
-
- Hou, Xiaoyuan (author)
- Fudan Univ, Peoples R China
-
- Qin, Jiajun (author)
- Linköpings universitet,Elektroniska och fotoniska material,Tekniska fakulteten,Fudan Univ, Peoples R China
-
show less...
-
(creator_code:org_t)
- 2020-12-07
- 2020
- English.
-
In: ACS Applied Nano Materials. - : AMER CHEMICAL SOC. - 2574-0970. ; 3:12, s. 11889-11896
- Related links:
-
https://liu.diva-por... (primary) (Raw object)
-
show more...
-
https://pubs.acs.org...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- Organic-inorganic hybrid perovskite thin films with nanostructured polycrystalline grains have shown great potential in various nanoscale optoelectrical applications. Among them, the field of electrical memory has fallen behind due to insufficient knowledge of the related resistive switching characters and mechanisms. In the present work, switching behaviors of perovskite memory devices are systematically analyzed by comparing them with organic memory devices. We found that decreasing the conductivity of a polycrystalline perovskite thin layer would lead to unipolar switching behaviors, which is supplementary to the present perovskite memory family where bipolar switching is commonly reported. Moreover, our proposed symmetrical device with a nanoscale heterolayer structure enables us not only to achieve highly reproducible unipolar switching devices but also to settle the argument whether microconducting channels exist within perovskite memory devices through characterizing the microscopic morphological homogeneity. Surprisingly, the scanning electron microscopy results show that partial 10 pm large perovskite grains would be decomposed into various 100 nm small grains under high external bias, indicating the presence of microconducting channels. Furthermore, energy-dispersive X-ray spectroscopy results together with photoluminescence results of the perovskite thin film before and after applying bias are nearly identical, demonstrating that microconducting channels are formed without any difference in compositions or optical properties. Our discoveries provide a practical strategy to achieve electrical storage via organic-inorganic hybrid perovskite thin-film devices.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- perovskite memory; resistive switching; unipolar switch; bipolar switch; microconducting channels
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database
- By the author/editor
-
Yu, Xianxi
-
Shen, Tangyao
-
Zhu, Chunqin
-
Zeng, Qi
-
Yu, Anran
-
Liu, Shaobo
-
show more...
-
Yi, Ruichen
-
Weng, Zhenhua
-
Zhan, Yiqiang
-
Hou, Xiaoyuan
-
Qin, Jiajun
-
show less...
- About the subject
-
- NATURAL SCIENCES
-
NATURAL SCIENCES
-
and Physical Science ...
-
and Condensed Matter ...
- Articles in the publication
-
ACS Applied Nano ...
- By the university
-
Linköping University