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Electronic structur...
Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission
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- Nilsson, P. O. (author)
- Chalmers University
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- Kanski, J. (author)
- Chalmers University
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- Thordson, J. V. (author)
- Chalmers University
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- Andersson, T. G. (author)
- Chalmers University
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- Nordgren, J. (author)
- Uppsala universitet,Fysiska institutionen,Uppsala University
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- Guo, J. (author)
- Uppsala University
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- Magnuson, Martin (author)
- Uppsala universitet,Fysiska institutionen,Uppsala University
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(creator_code:org_t)
- 1995
- 1995
- English.
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 52, s. R8643-
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Abstract
Subject headings
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- It is demonstrated that it is possible to investigate details of the electronic structure of an internal atomic monolayer using soft-x-ray-emission spectroscopy. The local and partial density of states of one monolayer and three monolayers of Si, embedded deep below a GaAs(001) surface, was extracted. Clear differences to the density of states for bulk Si were observed.
Subject headings
- NATURVETENSKAP -- Biologi (hsv//swe)
- NATURAL SCIENCES -- Biological Sciences (hsv//eng)
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- NATURAL SCIENCES
- NATURVETENSKAP
- Biology
- Biologi
- SPECTROSCOPY; DENSITIES; SPECTRA; STATES; GAAS
Publication and Content Type
- ref (subject category)
- art (subject category)
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