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Degradation and sel...
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Teng, PengpengLinköpings universitet,Elektroniska och fotoniska material,Tekniska fakulteten,Nanjing Univ Aeronaut & Astronaut, Peoples R China; Nanjing Univ Aeronaut & Astronaut, Sweden
(author)
Degradation and self-repairing in perovskite light-emitting diodes
- Article/chapterEnglish2021
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Elsevier,2021
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LIBRIS-ID:oai:DiVA.org:liu-181481
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-181481URI
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https://doi.org/10.1016/j.matt.2021.09.007DOI
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Language:English
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Summary in:English
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Subject category:art swepub-publicationtype
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Funding Agencies|ERCEuropean Research Council (ERC)European Commission [717026]; Swedish Energy Agency EnergimyndighetenSwedish Energy Agency [48758-1]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; DFGGerman Research Foundation (DFG)European Commission [SPP 2196, 424216076]; China Scholarship CouncilChina Scholarship Council [201906830040]; Nanjing University of Aeronautics and Astronautics PhD short-term visiting scholar project [180608DF06]; Priority Academic Program Development of Jiangsu Higher Education Institutions; Swiss Federal Office of Energy (SFOE)-BFE [SI/501805-01]
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One of the most critical challenges in perovskite light-emitting diodes (PeLEDs) lies in poor operational stability. Although field dependent ion migration is believed to play an important role in the operation of perovskite optoelectronic devices, a complete understanding of how it affects the stability of PeLEDs is still missing. Here, we report a unique self-repairing behavior that the electroluminescence of moderately degraded PeLEDs can almost completely restore to their initial performance after resting. We find that the accumulated halides within the hole transport layer undergo back diffusion toward the surface of the perovskite layer during resting, repairing the vacancies and thus resulting in electroluminescence recovery. These findings indicate that one of the dominant degradation pathways in PeLEDs is the generation of halide vacancies at perovskite/hole transport layer interface during operation. We thus further passivate this key interface, which results in a high external quantum efficiency of 22.8% and obviously improved operational stability.
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Reichert, SebastianTech Univ Chemnitz, Germany
(author)
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Xu, WeidongLinköpings universitet,Elektroniska och fotoniska material,Tekniska fakulteten(Swepub:liu)weixu55
(author)
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Yang, Shih-ChiSwiss Fed Labs Mat Sci & Technol, Switzerland
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Fu, FanSwiss Fed Labs Mat Sci & Technol, Switzerland
(author)
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Zou, YataoSoochow Univ, Peoples R China
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Yin, ChunyangLinköpings universitet,Elektroniska och fotoniska material,Tekniska fakulteten(Swepub:liu)chuyi94
(author)
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Bao, ChunxiongLinköpings universitet,Elektroniska och fotoniska material,Tekniska fakulteten(Swepub:liu)chuba17
(author)
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Karlsson, MaxLinköpings universitet,Elektroniska och fotoniska material,Tekniska fakulteten(Swepub:liu)maxka54
(author)
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Liu, XianjieNorrkoping Univ, Sweden
(author)
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Qin, JiajunLinköpings universitet,Elektroniska och fotoniska material,Tekniska fakulteten(Swepub:liu)jiaqi14
(author)
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Yu, TaoNanjing Univ, Peoples R China
(author)
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Tress, WolfgangZurich Univ Appl Sci, Switzerland
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Yang, YingNanjing Univ Aeronaut & Astronaut, Peoples R China; Nanjing Univ Aeronaut & Astronaut, Sweden
(author)
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Sun, BaoquanSoochow Univ, Peoples R China
(author)
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Deibel, CarstenTech Univ Chemnitz, Germany
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Gao, FengLinköpings universitet,Elektroniska och fotoniska material,Tekniska fakulteten(Swepub:liu)fenga88
(author)
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Linköpings universitetElektroniska och fotoniska material
(creator_code:org_t)
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In:Matter: Elsevier4:11, s. 3710-37242590-23932590-2385
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Teng, Pengpeng
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Reichert, Sebast ...
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Xu, Weidong
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Yang, Shih-Chi
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Fu, Fan
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Zou, Yatao
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Yin, Chunyang
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Bao, Chunxiong
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Karlsson, Max
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Liu, Xianjie
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Qin, Jiajun
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Yu, Tao
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Tress, Wolfgang
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Yang, Ying
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Sun, Baoquan
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Deibel, Carsten
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Gao, Feng
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