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Growth and characte...
Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
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- Zhao Ternehäll, Huan, 1982 (author)
- Chalmers,Chalmers tekniska högskola,Chalmers University of Technology
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- Wang, Shu Min, 1963 (author)
- Chalmers,Chalmers tekniska högskola,Chalmers University of Technology
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- Zhao, Qingxiang (author)
- Linköpings universitet,Institutionen för teknik och naturvetenskap,Tekniska högskolan
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- Sadeghi, Mahdad, 1964 (author)
- Chalmers,Chalmers tekniska högskola,Chalmers University of Technology
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- Larsson, Anders, 1957 (author)
- Chalmers,Chalmers tekniska högskola,Chalmers University of Technology
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- Zhao, Qing Xiang, 1962 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- Elsevier BV, 2009
- 2009
- English.
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In: JOURNAL OF CRYSTAL GROWTH. - : Elsevier BV. - 0022-0248. ; 311:7, s. 1723-1727
- Related links:
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http://dx.doi.org/10...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- We propose an innovative technique, making use of the In segregation effect, referred as the N irradiation method, to enhance In-N bonding and extend the emission wavelength of GaInNAs quantum wells (QWs). After the formation of a complete In floating layer, the growth is interrupted and N irradiation is initiated. The majority of N atoms are forced to bond with In atoms and their incorporation is regulated independently by the N exposure time and the As pressure. The effect of the N exposure time and As pressure on the N incorporation and the optical quality of GaInNAs QWs were investigated. Anomalous photoluminescence (PL) wavelength red shifts after rapid thermal annealing (RTA) were observed in the N-irradiated samples, whereas a normal GaInNAs sample revealed a blue shift. This method provides an alternative way to extend the emission wavelength of GaInNAs QWs with decent optical quality. We demonstrate light emission at 1546 nm from an 11-nm-thick QW, using this method and the PL intensity is similar to that of a 7-nm-thick GaInNAs QW grown at a reduced rate.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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