Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

Gogova, Daniela, 1967- (author): Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)

Ghezellou, Misagh, 1988- (author): Linköpings universitet,Halvledarmaterial,Tekniska fakulteten

Tran, Dat Q. (author): Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)

Richter, Steffen (author): Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Solid State Physics and NanoLund, Lund University, P. O. Box 118, 221 00 Lund, Sweden,Centre for III-nitride technology (C3NiT)

Papamichail, Alexis, 1990- (author): Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)

ul-Hassan, Jawad, 1974- (author): Linköpings universitet,Halvledarmaterial,Tekniska fakulteten

Persson, Axel R. (author): Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)

Persson, Per, 1971- (author): Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten

Kordina, Olof (author): Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)

Monemar, Bo, 1942- (author): Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)

Hilfiker, Matthew (author): Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA

Schubert, Mathias, 1966- (author): Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA,Centre for III-nitride technology (C3NiT)

Paskov, Plamen P., 1959- (author): Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)

Darakchieva, Vanya, 1971- (author): Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Solid State Physics and NanoLund, Lund University, P. O. Box 118, 221 00 Lund, Sweden,Centre for III-nitride technology (C3NiT)

(creator_code:org_t)

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth of beta-Ga2O3. Epitaxial beta-Ga2O3 layers at high growth rates (above 1 mu m/h), at low reagent flows, and at reduced growth temperatures (740 degrees C) are demonstrated. A high crystalline quality epitaxial material on a c-plane sapphire substrate is attained as corroborated by a combination of x-ray diffraction, high-resolution scanning transmission electron microscopy, and spectroscopic ellipsometry measurements. The hot-wall MOCVD process is transferred to homoepitaxy, and single-crystalline homoepitaxial beta-Ga2O3 layers are demonstrated with a 201 rocking curve width of 118 arc sec, which is comparable to those of the edge-defined film-fed grown (201) beta-Ga2O3 substrates, indicative of similar dislocation densities for epilayers and substrates. Hence, hot-wall MOCVD is proposed as a prospective growth method to be further explored for the fabrication of beta-Ga2O3.

By the author/editor: Gogova, Daniela, ...; Ghezellou, Misag ...; Tran, Dat Q.; Richter, Steffen; Papamichail, Ale ...; ul-Hassan, Jawad ...; show more...; Persson, Axel R.; Persson, Per, 19 ...; Kordina, Olof; Monemar, Bo, 194 ...; Hilfiker, Matthe ...; Schubert, Mathia ...; Paskov, Plamen P ...; Darakchieva, Van ...; show less...

About the subject

NATURAL SCIENCES: NATURAL SCIENCES; and Physical Science ...; and Condensed Matter ...

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