Effects of UV-ozone treatment on the performance of deep-ultraviolet photodetectors based on ZnGa2O4 epilayers

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Horng, Ray-HuaNatl Yang Ming Chiao Tung Univ, Taiwan (author)

Effects of UV-ozone treatment on the performance of deep-ultraviolet photodetectors based on ZnGa2O4 epilayers

Article/chapterEnglish2022

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ELSEVIER SCIENCE SA,2022
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LIBRIS-ID:oai:DiVA.org:liu-189915
https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-189915URI
https://doi.org/10.1016/j.matchemphys.2022.126847DOI

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Language:English
Summary in:English

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Funding Agencies|Ministry of Science and Technology, Taiwan [MOST 111-2622-8-A49-018-SB, 110-2224-E-A49-003, 109-2221-E-009-143-MY3, 111-2923-E-A49-003-MY3, 110-2218-E-002-037, 110-2218-E-A49-020-MBK]; Center for Emergent Functional Matter Science of National Chiao Tung University from the Featured Areas Research Center Program; MAtek [2021-T-006]
ZnGa2O4 epilayers have been grown on sapphire using the metalorganic chemical vapor deposition system. However, there is a trade-off between high conductivity and large defect density (oxygen vacancies) with the growth time of the growth of ZnGa2O4 epilayers. The ultraviolet (UV)-ozone treatment on the ZnGa2O4 epilayer at 100. C was proposed to reduce the number of oxygen vacancies in ZnGa2O4. The effect of UV-ozone treatment on the performance of ZnGa2O4 metal-semiconductor-metal (MSM) photodetector (PD) was evaluated. X-ray photoelectron spectroscopy analysis showed a decrease in the number of oxygen vacancies after UV-ozone treatment of ZnGa2O4. The measured lattice parameter near the surface around 10 nm of untreated ZnGa2O4 was 8.3434 +/- 0.0120 angstrom and increased slightly to 8.3775 +/- 0.0083 A. after UV-ozone treatment due to the decrease in oxygen vacancies. The dark current (at 5 V) of ZnGa2O4 PD was significantly reduced from 251 to 20.2 pA before and after UV-ozone treatment; it resulted in a substantial one-order enhancement in the on/off ratio of the PDs from 2.7 x 10(5) and 2.15 x 10(6) after the UV-ozone treatment. Furthermore, the rejection ratio also improved between 240 and 470 nm from 35 to 84 after UV-ozone treatment. The relationship between photocurrent and light intensity and the improvement in raising and falling time also showed the reduced density of trap states by UV-ozone treatment. This indicates that UV-ozone treatment can enhance the characteristics of ZnGa2O4 PDs for UV sensing applications.

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NATURVETENSKAP Fysik Den kondenserade materiens fysik hsv//swe
NATURAL SCIENCES Physical Sciences Condensed Matter Physics hsv//eng

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Li, Yun-ShengNatl Yang Ming Chiao Tung Univ, Taiwan (author)
Lin, Kun-LinTaiwan Semicond Res Inst TSRI, Taiwan (author)
Tarntair, Fu-GowNatl Yang Ming Chiao Tung Univ, Taiwan (author)
Nittayakasetwat, SiriNatl Yang Ming Chiao Tung Univ, Taiwan (author)
Hsiao, Ching-LienLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)chihs76 (author)
Natl Yang Ming Chiao Tung Univ, TaiwanTaiwan Semicond Res Inst TSRI, Taiwan (creator_code:org_t)

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In:Materials Chemistry and Physics: ELSEVIER SCIENCE SA2920254-05841879-3312

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By the author/editor: Horng, Ray-Hua; Li, Yun-Sheng; Lin, Kun-Lin; Tarntair, Fu-Gow; Nittayakasetwat, ...; Hsiao, Ching-Lie ...

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