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Tuneable Nonlinear ...
Tuneable Nonlinear Spin Response in a Nonmagnetic Semiconductor
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- Huang, Yuqing (author)
- Linköpings universitet,Elektroniska och fotoniska material,Tekniska fakulteten,Chinese Acad Sci, Peoples R China
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- Polojarvi, V (author)
- Tampere Univ, Finland
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- Aho, A. (author)
- Tampere Univ, Finland
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- Isoaho, R. (author)
- Tampere Univ, Finland
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- Hakkarainen, T. (author)
- Tampere Univ, Finland
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- Guina, M. (author)
- Tampere Univ, Finland
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- Buyanova, Irina (author)
- Linköpings universitet,Elektroniska och fotoniska material,Tekniska fakulteten
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- Chen, Weimin (author)
- Linköpings universitet,Elektroniska och fotoniska material,Tekniska fakulteten
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(creator_code:org_t)
- AMER PHYSICAL SOC, 2023
- 2023
- English.
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In: Physical Review Applied. - : AMER PHYSICAL SOC. - 2331-7019. ; 19:6
- Related links:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Nonlinear effects and dynamics are found in a wide range of research fields. In magnetic materials, nonlinear spin dynamics enables ultrafast manipulation of spin, which promises high-speed nonvolatile information processing and storage for future spintronic applications. However, a nonlinear spin response is not yet demonstrated in a nonmagnetic material that lacks strong magnetic interactions. Dilute nitride III-V materials, e.g., (Ga, N)As, have the ability to amplify the conduction-electron-spin polarization by filtering out minority spins via spin-polarized defect states at room temperature. Here, by employing coupled rate equations, we theoretically demonstrate the emergence of a nonlinear spin response in such a defect-enabled room-temperature spin amplifier. Furthermore, we showcase the proposed spin nonlinearity in a (Ga, N)As-InAs quantum dot (QD) coupled all-semiconductor nanostructure, by measuring the higher-harmonic generation, which converts the modulation of excitation polarization into the second-, third-, and fourth-order harmonic oscillations of the QDs photoluminescence intensity and polarization. The observed spin nonlinearity originates from defect-mediated spin-dependent recombination, which can be conveniently tuned with an external magnetic field and can potentially operate at a speed exceeding 1 GHz. The demonstrated spin nonlinearity could pave the way for nonlinear spintronic and optospintronic device applications based on nonmagnetic semiconductors with simultaneously achievable high operation speed and nonlinear response.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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