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  • Chang, Jui-CheLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten (author)

HiPIMS-grown AlN buffer for threading dislocation reduction in DC-magnetron sputtered GaN epifilm on sapphire substrate

  • Article/chapterEnglish2023

Publisher, publication year, extent ...

  • PERGAMON-ELSEVIER SCIENCE LTD,2023
  • electronicrdacarrier

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  • LIBRIS-ID:oai:DiVA.org:liu-197990
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-197990URI
  • https://doi.org/10.1016/j.vacuum.2023.112553DOI

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  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • Funding agencies: This research was funded by Vetenskapsrådet (grant number 2018-04198), Energimyndigheten (grant number 46658-1), Carl Tryggers Stiftelse (grant number CTS 22:2029) and Stiftelsen Olle Engkvist Byggmästare (grant number 197-0210). The Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO-Mat-LiU 2009-00971) is acknowledged for financial support. We acknowledge STINT foundation, Sweden, for supporting this international collaboration (grant number: MG2019-8485).
  • Gallium nitride (GaN) epitaxial films on sapphire (Al2O3) substrates have been grown using reactive magnetron sputter epitaxy with a liquid Ga target. Threading dislocations density (TDD) of sputtered GaN films was reduced by using an inserted high-quality aluminum nitride (AlN) buffer layer grown by reactive high power impulse magnetron sputtering (R-HiPIMS) in a gas mixture of Ar and N2. After optimizing the Ar/N2 pressure ratio and deposition power, a high-quality AlN film exhibiting a narrow full-width at half-maximum (FWHM) value of the double-crystal x-ray rocking curve (DCXRC) of the AlN(0002) peak of 0.086° was obtained by R-HiPIMS. The mechanism giving rise the observed quality improvement is attributed to the enhancement of kinetic energy of the adatoms in the deposition process when operated in a transition mode. With the inserted HiPIMS-AlN as a buffer layer for direct current magnetron sputtering (DCMS) GaN growth, the FWHM values of GaN(0002) and (10 1‾ 1) XRC decrease from 0.321° to 0.087° and from 0.596° to 0.562°, compared to the direct growth of GaN on sapphire, respectively. An order of magnitude reduction from 2.7 × 109 cm−2 to 2.0 × 108 cm−2 of screw-type TDD calculated from the FWHM of the XRC data using the inserted HiPIMS-AlN buffer layer demonstrates the improvement of crystal quality of GaN. The result of TDD reduction using the HiPIMS-AlN buffer was also verified by weak beam dark-field (WBDF) cross-sectional transmission electron microscopy (TEM).

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  • Tseng, Eric Nestor,PostdoktorLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)erine87 (author)
  • Lo, Yi-LingLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)n/a (author)
  • Nayak, Sanjay KumarLinköpings universitet,Nanostrukturerade material,Tekniska fakulteten(Swepub:liu)sanna69 (author)
  • Lundin, Daniel,1980-Linköpings universitet,Plasma och ytbeläggningsfysik,Tekniska fakulteten(Swepub:liu)danlu03 (author)
  • Persson, Per O. Å.,1971-Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)perpe25 (author)
  • Horng, Ray-HuaNational Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan (author)
  • Hultman, Lars,Professor,1960-Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)larhu75 (author)
  • Birch, Jens,1960-Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)jenbi91 (author)
  • Hsiao, Ching-Lien,1975-Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)chihs76 (author)
  • Linköpings universitetTunnfilmsfysik (creator_code:org_t)

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  • In:Vacuum: PERGAMON-ELSEVIER SCIENCE LTD2170042-207X1879-2715

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