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HiPIMS-grown AlN bu...
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Chang, Jui-CheLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
(author)
HiPIMS-grown AlN buffer for threading dislocation reduction in DC-magnetron sputtered GaN epifilm on sapphire substrate
- Article/chapterEnglish2023
Publisher, publication year, extent ...
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PERGAMON-ELSEVIER SCIENCE LTD,2023
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electronicrdacarrier
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LIBRIS-ID:oai:DiVA.org:liu-197990
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-197990URI
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https://doi.org/10.1016/j.vacuum.2023.112553DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Funding agencies: This research was funded by Vetenskapsrådet (grant number 2018-04198), Energimyndigheten (grant number 46658-1), Carl Tryggers Stiftelse (grant number CTS 22:2029) and Stiftelsen Olle Engkvist Byggmästare (grant number 197-0210). The Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO-Mat-LiU 2009-00971) is acknowledged for financial support. We acknowledge STINT foundation, Sweden, for supporting this international collaboration (grant number: MG2019-8485).
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Gallium nitride (GaN) epitaxial films on sapphire (Al2O3) substrates have been grown using reactive magnetron sputter epitaxy with a liquid Ga target. Threading dislocations density (TDD) of sputtered GaN films was reduced by using an inserted high-quality aluminum nitride (AlN) buffer layer grown by reactive high power impulse magnetron sputtering (R-HiPIMS) in a gas mixture of Ar and N2. After optimizing the Ar/N2 pressure ratio and deposition power, a high-quality AlN film exhibiting a narrow full-width at half-maximum (FWHM) value of the double-crystal x-ray rocking curve (DCXRC) of the AlN(0002) peak of 0.086° was obtained by R-HiPIMS. The mechanism giving rise the observed quality improvement is attributed to the enhancement of kinetic energy of the adatoms in the deposition process when operated in a transition mode. With the inserted HiPIMS-AlN as a buffer layer for direct current magnetron sputtering (DCMS) GaN growth, the FWHM values of GaN(0002) and (10 1‾ 1) XRC decrease from 0.321° to 0.087° and from 0.596° to 0.562°, compared to the direct growth of GaN on sapphire, respectively. An order of magnitude reduction from 2.7 × 109 cm−2 to 2.0 × 108 cm−2 of screw-type TDD calculated from the FWHM of the XRC data using the inserted HiPIMS-AlN buffer layer demonstrates the improvement of crystal quality of GaN. The result of TDD reduction using the HiPIMS-AlN buffer was also verified by weak beam dark-field (WBDF) cross-sectional transmission electron microscopy (TEM).
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Tseng, Eric Nestor,PostdoktorLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)erine87
(author)
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Lo, Yi-LingLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)n/a
(author)
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Nayak, Sanjay KumarLinköpings universitet,Nanostrukturerade material,Tekniska fakulteten(Swepub:liu)sanna69
(author)
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Lundin, Daniel,1980-Linköpings universitet,Plasma och ytbeläggningsfysik,Tekniska fakulteten(Swepub:liu)danlu03
(author)
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Persson, Per O. Å.,1971-Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)perpe25
(author)
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Horng, Ray-HuaNational Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
(author)
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Hultman, Lars,Professor,1960-Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)larhu75
(author)
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Birch, Jens,1960-Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)jenbi91
(author)
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Hsiao, Ching-Lien,1975-Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)chihs76
(author)
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Linköpings universitetTunnfilmsfysik
(creator_code:org_t)
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In:Vacuum: PERGAMON-ELSEVIER SCIENCE LTD2170042-207X1879-2715
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