Search: onr:"swepub:oai:DiVA.org:liu-199702" >
Solution-Processed ...
Solution-Processed Polymer Dielectric Interlayer for Low-Voltage, Unipolar n-Type Organic Field-Effect Transistors
-
- Perinot, Andrea (author)
- Ist Italiano Tecnol, Italy
-
- Scuratti, Francesca (author)
- Ist Italiano Tecnol, Italy
-
- Scaccabarozzi, Alberto D. (author)
- Ist Italiano Tecnol, Italy
-
show more...
-
- Tran, Karolina (author)
- Univ Groningen, Netherlands
-
- Salazar-Rios, Jorge Mario (author)
- Univ Groningen, Netherlands
-
- Loi, Maria Antonietta (author)
- Univ Groningen, Netherlands
-
- Salvatore, Giovanni (author)
- Univ Ca Foscari Venezia, Italy
-
- Fabiano, Simone (author)
- Linköpings universitet,Laboratoriet för organisk elektronik,Tekniska fakulteten
-
- Caironi, Mario (author)
- Ist Italiano Tecnol, Italy
-
show less...
-
(creator_code:org_t)
- AMER CHEMICAL SOC, 2023
- 2023
- English.
-
In: ACS Applied Materials and Interfaces. - : AMER CHEMICAL SOC. - 1944-8244 .- 1944-8252. ; 15:48, s. 56095-56105
- Related links:
-
https://urn.kb.se/re...
-
show more...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- The integration of organic electronic circuits into real-life applications compels the fulfillment of a range of requirements, among which the ideal operation at a low voltage with reduced power consumption is paramount. Moreover, these performance factors should be achieved via solution-based fabrication schemes in order to comply with the promise of cost- and energy-efficient manufacturing offered by an organic, printed electronic technology. Here, we propose a solution-based route for the fabrication of low-voltage organic transistors, encompassing ideal device operation at voltages below 5 V and exhibiting n-type unipolarization. This process is widely applicable to a variety of semiconducting and dielectric materials. We achieved this through the use of a photo-cross-linked, low-k dielectric interlayer, which is used to fabricate multilayer dielectric stacks with areal capacitances of up to 40 nF/cm(2) and leakage currents below 1 nA/cm(2). Because of the chosen azide-based cross-linker, the dielectric promotes n-type unipolarization of the transistors and demonstrated to be compatible with different classes of semiconductors, from conjugated polymers to carbon nanotubes and low-temperature metal oxides. Our results demonstrate a general applicability of our unipolarizing dielectric, facilitating the implementation of complementary circuitry of emerging technologies with reduced power consumption.
Subject headings
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
Keyword
- organic electronics; organic transistors; field-effecttransistors; low voltage; cross-linking; multilayer dielectric; doping
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database