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ScAlN nanowires :
ScAlN nanowires : A cathodoluminescence study
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- Bohnen, T. (author)
- Radboud University Nijmegen
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- Yazdi, Gholamreza (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Yakimova, Rositsa (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- van Dreumel, G W G (author)
- Radboud University Nijmegen
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- Hageman, P R (author)
- Radboud University Nijmegen
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- Vlieg, E. (author)
- Radboud University Nijmegen
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- Algra, R E (author)
- Radboud University Nijmegen
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- Verheijen, M A (author)
- Philips Res Labs
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- Edgar, J H (author)
- Kansas State University
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(creator_code:org_t)
- Elsevier BV, 2009
- 2009
- English.
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In: JOURNAL OF CRYSTAL GROWTH. - : Elsevier BV. - 0022-0248. ; 311:11, s. 3147-3151
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Wurtzite ScAlN nanowires, grown on a scandium nitride (ScN) thin film by hydride vapor phase epitaxy (HVPE), were analyzed by energy dispersive analysis of X-rays (EDX), CL, high resolution transmission electron spectroscopy (HRTEM), and scanning electron microscopy (SEM). The wires were grown along the [0 0 0 1] axis, had an average length of 1 mu m, a diameter between 50 and 150 run, and a ScAlN composition with a 95:5 Al:Sc ratio. Cathodoluminescence studies on the individual wires showed a sharp emission near 2.4 eV, originating from the Sc atoms in the aluminum nitride (AlN) matrix. The formation of such a semiconducting ScAlN alloy could present a new alternative to InAlN for optoelectronic applications operating in the 200-550 nm range.
Keyword
- Nanostructures; Hydride vapor phase epitaxy; Nitrides; Semiconducting aluminum compounds
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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