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High Power, Single Stage SiGaN HEMT Class EPower Amplifier at GHz Frequencies
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- Azam, Sher, 1971- (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Jonsson, Rolf (author)
- Swedish Defense Research Agency (FOI), Box 1165, SE-581 11 Linkoping, Sweden
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- Fritzin, Jonas (author)
- Linköpings universitet,Elektroniska komponenter,Tekniska högskolan
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Abstract
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- A high power single stage class E power amplifier is implemented with lumped elements at 0.89-1.02GHz using Silicon GaN High Electron Mobility Transistor as an active device. The maximum drain efficiency (DE) and power added efficiency (PAE) of 67 and 65 % respectively is obtained with a maximum output power of 42.2 dBm (~ 17 W) and amaximum power gain of 15 dB. We obtained good results at all measured frequencies.
Keyword
- Class E
- PAE
- Power Amplifiers
- Gallium Nitride
- HEMT
- NATURAL SCIENCES
- NATURVETENSKAP
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- ovr (subject category)
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