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A New Load Pull TCA...
A New Load Pull TCAD Simulation Technique for Class D, E & FSwitching Characteristics of Transistors
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- Azam, Sher, 1971- (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Svensson, Christer (författare)
- Linköpings universitet,Elektroniska komponenter,Tekniska högskolan
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- Wahab, Qamar (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Engelska.
- Relaterad länk:
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Abstract
Ämnesord
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- We have further developed a computational load pull simulation technique inTCAD. It can be used to study the Class-D, E & F switching response of the transistors. Westudied our enhanced version of previously fabricated and tested SiC transistor. Thesimulated Gain (dB), Power density (W/mm), switching loss (W/mm) and power addedefficiency (PAE %) at 500 MHz were studied using this technique. A PAE of 84 % at500MHz with 26 dB Power gain and power density of 2.75 W/mm is achieved. Thistechnique allows the prediction of switching response of the device before undertaking anexpensive and time-consuming device fabrication. The beauty of this technique is that, weneed no matching and other lumped element networks to study the large signal switchingbehavior of RF and microwave transistors.
Nyckelord
- Power Amplifier
- Silicon Carbide
- TCAD
- Switching
- Technique
- NATURAL SCIENCES
- NATURVETENSKAP
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