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Band structure effe...
Band structure effects in nitrogen K-edge resonant inelastic X-ray scattering from GaN
- Article/chapterEnglish2004
Publisher, publication year, extent ...
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2004-04-19
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Wiley,2004
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-24600
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-24600URI
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https://doi.org/10.1002/pssb.200409040DOI
Supplementary language notes
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Language:English
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Summary in:English
Part of subdatabase
Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Systematic experimental data on resonant inelastic X-ray scattering (RIXS) in GaN near the N K-edge are presented for the first time. Excitation energy dependence of the spectral structures manifests the band structure effects originating from momentum selectivity of the RIXS process. This finding allows obtaining k-resolved band structure information for GaN crystals and nanostructures. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Subject headings and genre
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NATURAL SCIENCES
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NATURVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
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Schmitt, T
(author)
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Rubensson, J. -E
(author)
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Blaha, P
(author)
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Paskova, Tanja,1961-Linköpings universitet,Institutionen för fysik, kemi och biologi(Swepub:liu)tanpa12
(author)
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Nilsson, P.O.
(author)
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Linköpings universitetInstitutionen för fysik, kemi och biologi
(creator_code:org_t)
Related titles
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In:Physica status solidi. B, Basic research: Wiley241:70370-19721521-3951
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