Effective optical manipulation of the charge state and emission intensity of the InAs/GaAs quantum dots by means of additional infrared illumination

Moskalenko, E.S. (author)

Karlsson, Fredrik, 1974- (author): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

Donchev, V (author)

Holtz, Per-Olof, 1951- (author): Linköpings universitet,Institutionen för fysik, kemi och biologi

Monemar, Bo, 1942- (author): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

Schoenfeld, W.V. (author)

Petroff, P.M. (author)

(creator_code:org_t)

AIP Publishing, 2004
2004
English.
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85:5, s. 754-756

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

The effect of infrared laser on charge state and emission intensity of the InAs/GaAs quantum dots (QDs)was analyzed. It was observed that the excitonic photoluminescence spectra of the QDs were redistributed in favor of the neutral excitation. It was also observed that photoluminescence intensity from the QDs increased by more than a factor of 5. The results showed that the emission intensity from the QDs can be effectively enhanced by optical means.

By the author/editor: Moskalenko, E.S.; Karlsson, Fredri ...; Donchev, V; Holtz, Per-Olof, ...; Monemar, Bo, 194 ...; Schoenfeld, W.V.; show more...; Petroff, P.M.; show less...

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