Influence of gate bias of MISiC-FET gas sensor device on the sensing properties

Nakagomi, ShinjiSchool of Science and Engineering Ishinomaki Senshu University (author)

The influence of gate bias on the gas sensing properties of SiC-based field effect transistors with catalytic gate and a buried short channel has been studied. The drain current-voltage (I-d-V-D) characteristics of the device reveal non-saturation property, which is a consequence of the short channel design. The drain current is larger in hydrogen ambient than in oxygen ambient at the same drain voltage. The threshold voltage decreases with increasing positive gate bias, and increases with increasing negative gate bias. When a positive bias is applied to the gate, the I-d-V-D characteristics reveal a tendency to saturate. A positive gate bias increases the drain voltage response to hydrogen, as compared with a negative applied gate bias. However, a positive gate bias decreases the stability of the device signal. A change in the channel resistivity is the main reason for the change in the electrical properties when a positive gate bias is applied. A physical model that explains the influence of the gate bias has been studied, and the behavior of the barrier height in the channel was estimated by using the temperature dependence of the I-d-V-D characteristics.

Fukumura, AkiraSchool of Science and Engineering Ishinomaki Senshu University (author)
Kokubun, YoshihiroSchool of Science and Engineering Ishinomaki Senshu University (author)
Savage, SusanAcreo AB (author)
Wingbrant, Helena,1977-Linköpings universitet,Tekniska högskolan,Tillämpad Fysik(Swepub:liu)helwi23 (author)
Andersson, Mike,1977-Linköpings universitet,Tekniska högskolan,Tillämpad Fysik(Swepub:liu)mikan22 (author)
Lundström, Ingemar,1941-Linköpings universitet,Tekniska högskolan,Tillämpad Fysik(Swepub:liu)inglu57 (author)
Löfdahl, MikaelAppliedSensor AB (author)
Lloyd-Spets, Anita,1951-Linköpings universitet,Tekniska högskolan,Tillämpad Fysik(Swepub:liu)anill63 (author)
School of Science and Engineering Ishinomaki Senshu UniversityAcreo AB (creator_code:org_t)

In:Sensors and actuators. B, Chemical: Elsevier BV108, s. 501-5070925-40051873-3077

By the author/editor: Nakagomi, Shinji; Fukumura, Akira; Kokubun, Yoshihi ...; Savage, Susan; Wingbrant, Helen ...; Andersson, Mike, ...; show more...; Lundström, Ingem ...; Löfdahl, Mikael; Lloyd-Spets, Ani ...; show less...

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