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High-quality bulk a...
High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
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Paskova, T. (author)
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Kroeger, R. (author)
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Figge, S. (author)
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Hommel, D. (author)
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- Darakchieva, Vanya, 1971- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Monemar, Bo, 1942- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Preble, E. (author)
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Hanser, A. (author)
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Williams, N.M. (author)
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Tutor, M. (author)
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(creator_code:org_t)
- AIP Publishing, 2006
- 2006
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:5, s. 051914-
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- Thick GaN bars with [1120] orientation have been sliced from GaN boules grown on freestanding films by hydride vapor phase epitaxy (HVPE) in the [0001] direction. High-resolution x-ray diffraction and transmission electron microscopy have been used to study the structural quality and defect distribution in the material in comparison to heteroepitaxially grown thick HVPE-GaN films grown in the [1120] direction on (1102)-plane sapphire. It is demonstrated that while the heteroepitaxial material possesses a high density of stacking faults and partial dislocations, leading to anisotropic structural characteristics, the (1120)-plane bulk GaN, sliced from boules, exhibits low dislocation density and narrow rocking curves with isotropic in-plane character. © 2006 American Institute of Physics.
Keyword
- NATURAL SCIENCES
- NATURVETENSKAP
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- ref (subject category)
- art (subject category)
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- By the author/editor
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Paskova, T.
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Kroeger, R.
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Figge, S.
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Hommel, D.
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Darakchieva, Van ...
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Monemar, Bo, 194 ...
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show more...
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Preble, E.
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Hanser, A.
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Williams, N.M.
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Tutor, M.
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show less...
- Articles in the publication
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Applied Physics ...
- By the university
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Linköping University