Coexistence of type-I and type-II band lineups in Cd(Te,Se)/ZnSe quantum-dot structures

The authors report on transmission electron microscopy, cathodoluminescence, and time resolved photoluminescence studies of thin Cd(Te,Se) layers in a ZnSe matrix, grown by molecular beam epitaxy. All observations confirm strain-induced self-assembly of quantum dots (QD's), induced primarily by the 14% lattice mismatch between CdTe and ZnSe. The emission spectrum of the structure is the superposition of a relatively narrow luminescence line originating from CdSe-enriched type-I QD's and a broad band attributed to the emission of an ultrathin ZnTeSe/ZnSe layer with type-II band lineup, formed in between the QD's. © 2006 American Institute of Physics.

Sedova, I.V. (author)
Lyublinskaya, O.G. (author)
Sorokin, S.V. (author)
Sitnikova, A.A. (author)
Ivanov, S.V. (author)
Bergman, Peder,1961-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)pedbe86 (author)
Monemar, Bo,1942-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)bomo46 (author)
Donatini, F. (author)
Dang, Le Si (author)
Linköpings universitetTekniska högskolan (creator_code:org_t)

By the author/editor: Toropov, A.A.; Sedova, I.V.; Lyublinskaya, O. ...; Sorokin, S.V.; Sitnikova, A.A.; Ivanov, S.V.; show more...; Bergman, Peder, ...; Monemar, Bo, 194 ...; Donatini, F.; Dang, Le Si; show less...

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