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Growth of bulk GaN ...
Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor
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- Hemmingsson, Carl, 1964- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Paskov, Plamen, 1959- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Pozina, Galia, 1966- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Heuken, M. (author)
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Schineller, B. (author)
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- Monemar, Bo, 1942- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- Elsevier BV, 2006
- 2006
- English.
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In: Superlattices and Microstructures. - : Elsevier BV. - 0749-6036 .- 1096-3677. ; 40:4-6 SPEC. ISS., s. 205-213
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Using the hydride vapour phase epitaxy technique, we have grown 2-inch diameter bulk GaN material with a thickness up to 2 mm. The growth was performed in a vertical hot-walled reactor at atmospheric pressure. In this geometry, the process gases are distributed from the bottom upwards through the reactor. We present recent results on growth and characterization of the bulk GaN material. The structural and optical properties of the layers have been studied using decorative etching, optical microscopy, scanning electron microscopy, X-ray diffraction, cathodoluminescence, and low temperature photoluminescence. © 2006 Elsevier Ltd. All rights reserved.
Keyword
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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