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Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures
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- Kakanakova-Georgieva, Anelia, 1970- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Forsberg, Urban, 1971- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Ivanov, Ivan Gueorguiev, 1955- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- (creator_code:org_t)
- Elsevier BV, 2007
- 2007
- English.
- In: Journal of Crystal Growth, Vol. 300. - : Elsevier BV. - 0022-0248. ; , s. 100-103
- Conference paper (peer-reviewed)
Abstract
Subject headings
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- The hot-wall metalorganic chemical vapor deposition (MOCVD) concept has been applied to the growth of AlxGa1-xN/GaN high electron mobility transistor (HEMT) device heterostructures on 2 inch 4H-SiC wafers. Due to the small vertical and horizontal temperature gradients inherent to the hot-wall MOCVD concept the variations of all properties of a typical HEMT heterostructure are very small over the wafer: GaN buffer layer thickness of 1.83 μm±1%, Al content of the AlxGa1-xN barrier of 27.7±0.1%, AlxGa1-xN barrier thickness of 25 nm±4%, sheet carrier density of 1.05×1013 cm-2±4%, pinch-off voltage of -5.3 V±3%, and sheet resistance of 449 Ω±1%.
Keyword
- NATURAL SCIENCES
- NATURVETENSKAP
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- ref (subject category)
- kon (subject category)
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