Dynamic properties of radiative recombination in p-type d-doped layers in GaAs

Zhao, Q.X.Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and University of Göteborg, Sweden (author)

We present an optical study of thin Zn-doped GaAs layers embedded in bulk GaAs, grown by metal-organic vapor-phase-epitaxy by means of stationary and time-resolved optical spectroscopy. The concentration of the Zn acceptors was aimed at 2×1020/cm3 in 4-nm-wide doping regions. The intensity of the optical radiative transition (so called the F emission) appearing in photoluminescence spectra was found to be related to holes confined at doping regions. The F emission shows a strong dependence on excitation intensity and temperature. The energy position varies from 1.46 to 1.49 eV as the excitation density changes from about 40 mW/cm2 to 23 W/cm2. The dynamic properties of the F-emission band have been studied by time-resolved spectroscopy. The F emission shows a nonexponential decay character. The decay time of the F emission exhibits a strong dependence on the detection energy within the F-emission band. The decay time becomes longer as the detection energy is redshifted.

Willander, M.Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and University of Göteborg, Sweden (author)
Bergman, Peder,1961-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)pedbe86 (author)
Holtz, Per-Olof,1951-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)perho67 (author)
Lu, W.National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai China (author)
Shen, S.C.National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai China (author)
Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and University of Göteborg, SwedenTekniska högskolan (creator_code:org_t)

By the author/editor: Zhao, Q.X.; Willander, M.; Bergman, Peder, ...; Holtz, Per-Olof, ...; Lu, W.; Shen, S.C.

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