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Defect related issu...
Defect related issues in the "current roll-off" in InGaN based light emitting diodes
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- Monemar, Bo, 1942- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Sernelius, Bo, 1948- (author)
- Linköpings universitet,Tekniska högskolan,Teoretisk Fysik
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(creator_code:org_t)
- AIP Publishing, 2007
- 2007
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 91, s. 181103-1-181103-3
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Abstract
Subject headings
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- Defect related contributions to the reduction of the internal quantum efficiency of InGaN-based multiple quantum well light emitting diodes under high forward bias conditions are discussed. Screening of localization potentials for electrons is an important process to reduce the localization at high injection. The possible role of threading dislocations in inducing a parasitic tunneling current in the device is discussed. Phonon-assisted transport of holes via tunneling at defect sites along dislocations is suggested to be involved, leading to a nonradiative parasitic process enhanced by a local temperature rise at high injection.
Keyword
- gallium compounds
- III-V semiconductors
- indium compounds
- light emitting diodes
- screw dislocations
- semiconductor quantum wells
- tunnelling
- wide band gap semiconductors
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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