Clustering of vacancy defects in high-purity semi-insulating SiC

Aavikko, R. (author)

Saarinen, K. (author)

Tuomisto, F. (author)

Magnusson, Björn, 1970- (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

Nguyen, Son Tien, 1953- (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

Janzén, Erik, 1954- (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

(creator_code:org_t)

2007
2007
English.
In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 75:8, s. 085208-

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of four to five missing atoms and (ii) Si-vacancy-related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity in both as-grown and annealed materials. Our results suggest that Si-vacancy-related complexes electrically compensate the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity. © 2007 The American Physical Society.

By the author/editor: Aavikko, R.; Saarinen, K.; Tuomisto, F.; Magnusson, Björn ...; Nguyen, Son Tien ...; Janzén, Erik, 19 ...

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