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Identification of Ga-interstitial defects in GaNyP1−y and AlxGa1−xNyP1−y

Thinh, N. Q. (author)
Vorona, Igor, 1967- (author)
Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
Buyanova, Irina, 1960- (author)
Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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Chen, Weimin, 1959- (author)
Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
Limpijumnong, S. (author)
School of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima, Thailand
Zhang, S. B. (author)
National Renewable Energy Laboratory, Golden, Colorado, USA
Hong, Y. G. (author)
Department of Electrical and Computer Engineering, University of California, La Jolla, California, USA
Tu, C. W. (author)
Department of Electrical and Computer Engineering, University of California, La Jolla, California, USA
Utsumi, A. (author)
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Japan
Furukawa, Y. (author)
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Japan
Moon, S. (author)
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Japan
Wakahara, A. (author)
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Japan
Yonezu, H. (author)
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Japan
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 (creator_code:org_t)
APS, 2004
2004
English.
In: Physical Review B. Condensed Matter and Materials Physics. - : APS. - 1098-0121 .- 1550-235X. ; 70:12, s. 121201-
Related links:
https://urn.kb.se/re...
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https://doi.org/10.1...
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  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Two Ga -interstitial (Gai) defects are identified by optically detected magnetic resonance as common grown-in defects in molecular beam epitaxial GaNyP1−y and AlxGa1−xNyP1−y. Characteristic hyperfine structure arising from spin interaction between an unpaired electron and a Ga nucleus is clearly resolved. The observed strong and nearly isotropic hyperfine interaction reveals an electron wave function of A1 symmetry that is highly localized at the Gai and thus a deep-level defect. Our analysis based on first-principles calculations suggests that these defects are complexes containing one Gai2+ .

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