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Raman Studies of GaNP Alloy
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- Buyanova, Irina, 1960- (author)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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- Chen, Weimin, 1959- (author)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
- Goldys, E. M. (author)
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- Xin, H. P. (author)
- Tu, C. W. (author)
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- (creator_code:org_t)
- Materials Research Society Symposium - Proceedings, Vol. 693 : MRS, 2002
- 2002
- English.
- Conference paper (peer-reviewed)
Abstract
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- Raman scattering (RS) spectroscopy is employed to characterize the effect of nitrogen on structural properties of GaNxP1-x alloy with nitrogen composition up to 3 %. Two-mode behavior of the alloy is clearly shown. The frequency of the GaP-like LO phonons is found to decrease with N composition as -1.13 cm-1 x. This dependence is proposed to be largely due to the biaxial strain in the GaNP epilayers, as a result of lattice mismatch to the GaP substrate. The frequency of the GaN-like phonons is found to be more sensitive to nitrogen content, increasing with the rate of +2.6 cm-1x. The addition of nitrogen is also found to cause a dramatic quenching of the two-phonon Raman scattering and an appearance of the zone edge GaP-like vibrations. These effects are suggested to reflect local distortion in the GaNP lattice induced by nitrogen, as well as possible clustering of N atoms.
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- NATURAL SCIENCES
- NATURVETENSKAP
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