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The 3.466 eV Bound Exciton in GaN
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- Monemar, Bo, 1942- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Chen, Weimin, 1959- (author)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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- Paskov, Plamen, 1959- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- 2001
- 2001
- English.
- In: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 228:2, s. 489-492
- Journal article (peer-reviewed)
Abstract
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- We discuss the available optical data for the 3.466 eV bound exciton in GaN, which has been a controversial issue in the recent literature. We conclude that the experimental results are only consistent with the identification as an exciton bound at a neutral acceptor with a spin-like bound hole. The chemical identity is still not clear.
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- NATURAL SCIENCES
- NATURVETENSKAP
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