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Properties of Ga-interstitial defects in AlxGa 1-xNyP1-y

Thinh, N.Q. (author)
Vorona, Igor (author)
Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
Buyanova, Irina A. (author)
Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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Chen, Weimin (author)
Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
Limpijumnong, S. (author)
School of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima 30000, Thailand
Zhang, S.B. (author)
National Renewable Energy Laboratory, Golden, CO 80401, United States
Hong, Y.G. (author)
Department of Electrical and Computer Engineering, University of California, San Diego, CA 92093-0407, United States
Xin, H.P. (author)
Department of Electrical and Computer Engineering, University of California, San Diego, CA 92093-0407, United States
Tu, C.W. (author)
Department of Electrical and Computer Engineering, University of California, San Diego, CA 92093-0407, United States
Utsumi, A. (author)
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan
Furukawa, Y. (author)
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan
Moon, S. (author)
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan
Wakahara, A. (author)
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan
Yonezu, H. (author)
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan
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 (creator_code:org_t)
2005
2005
English.
In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 71:12
Related links:
https://urn.kb.se/re...
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https://doi.org/10.1...
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  • Journal article (peer-reviewed)
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  • A detailed account of the experimental results from optically detected magnetic resonance (ODMR) studies of grown-in defects in (Al)GaNP alloys, prepared by molecular beam epitaxy, is presented. The experimental procedure and an in-depth analysis by a spin Hamiltonian lead to the identification of two Gai defects (Gai-A and Gai-B). New information on the electronic properties of these defects and the recombination processes leading to the observation of the ODMR signals will be provided. These defects are deep-level defects. In conditions when the defect is directly involved in radiative recombination of the near-infrared photoluminescence band, the energy level of the Gai-B defect was estimated to be deeper than ~1.2 eV from either the conduction or valence band edge. In most cases, however, these defects act as nonradiative recombination centers, reducing the efficiency of light emission from the alloys. They can thus undermine the performance of potential photonic devices. High thermal stability is observed for these defects. ©2005 The American Physical Society.

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TECHNOLOGY
TEKNIKVETENSKAP

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