Search: onr:"swepub:oai:DiVA.org:liu-45488" >
Properties of Ga-in...
Properties of Ga-interstitial defects in AlxGa 1-xNyP1-y
-
Thinh, N.Q. (author)
-
- Vorona, Igor (author)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
-
- Buyanova, Irina A. (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
-
show more...
-
- Chen, Weimin (author)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
-
- Limpijumnong, S. (author)
- School of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima 30000, Thailand
-
- Zhang, S.B. (author)
- National Renewable Energy Laboratory, Golden, CO 80401, United States
-
- Hong, Y.G. (author)
- Department of Electrical and Computer Engineering, University of California, San Diego, CA 92093-0407, United States
-
- Xin, H.P. (author)
- Department of Electrical and Computer Engineering, University of California, San Diego, CA 92093-0407, United States
-
- Tu, C.W. (author)
- Department of Electrical and Computer Engineering, University of California, San Diego, CA 92093-0407, United States
-
- Utsumi, A. (author)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan
-
- Furukawa, Y. (author)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan
-
- Moon, S. (author)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan
-
- Wakahara, A. (author)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan
-
- Yonezu, H. (author)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan
-
show less...
-
(creator_code:org_t)
- 2005
- 2005
- English.
-
In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 71:12
- Related links:
-
https://urn.kb.se/re...
-
show more...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- A detailed account of the experimental results from optically detected magnetic resonance (ODMR) studies of grown-in defects in (Al)GaNP alloys, prepared by molecular beam epitaxy, is presented. The experimental procedure and an in-depth analysis by a spin Hamiltonian lead to the identification of two Gai defects (Gai-A and Gai-B). New information on the electronic properties of these defects and the recombination processes leading to the observation of the ODMR signals will be provided. These defects are deep-level defects. In conditions when the defect is directly involved in radiative recombination of the near-infrared photoluminescence band, the energy level of the Gai-B defect was estimated to be deeper than ~1.2 eV from either the conduction or valence band edge. In most cases, however, these defects act as nonradiative recombination centers, reducing the efficiency of light emission from the alloys. They can thus undermine the performance of potential photonic devices. High thermal stability is observed for these defects. ©2005 The American Physical Society.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database
- By the author/editor
-
Thinh, N.Q.
-
Vorona, Igor
-
Buyanova, Irina ...
-
Chen, Weimin
-
Limpijumnong, S.
-
Zhang, S.B.
-
show more...
-
Hong, Y.G.
-
Xin, H.P.
-
Tu, C.W.
-
Utsumi, A.
-
Furukawa, Y.
-
Moon, S.
-
Wakahara, A.
-
Yonezu, H.
-
show less...
- Articles in the publication
-
Physical Review ...
- By the university
-
Linköping University