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Properties of Al-SrTiO3-ITO capacitors for microelectronic device applications
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- Konofaos, N. (author)
- Comp. Engineering/Informatics Dept., University of Patras, Patras 26500, Greece
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- Evangelou, E.K. (author)
- Laboratorio MDM-INFM, Agrate Briana 20041, Italy
- Wang, Z. (author)
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- Comp Engineering/Informatics Dept., University of Patras, Patras 26500, Greece Laboratorio MDM-INFM, Agrate Briana 20041, Italy (creator_code:org_t)
- 2004
- 2004
- English.
- In: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 51:7, s. 1202-1205
- Journal article (peer-reviewed)
Abstract
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- Growth of SrTiO3 (STO) thin films on indium tin oxide (ITO) substrates took place by RF magnetron sputtering under various deposition conditions. Subsequent AI metallization created metal-insulator-metal (MIM) capacitors. The properties of such capacitors were investigated by means of structural and electrical measurements, revealing the films transparency, the dielectric constant, the switching time characteristics, and the trapped charges density. Dielectric constant values as high as 120 were obtained for low frequencies of around 2 kHz, the switching time was found to be 3.2 µs and the trapped charges were found equal to 2.9 nCcm-2. The results showed that the films were suitable for use in electronic devices where high capacitance is required and for potential applications in optical devices. © 2004 IEEE.
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- TECHNOLOGY
- TEKNIKVETENSKAP
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- art (subject category)
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