SwePub
Sök i LIBRIS databas

  Extended search

onr:"swepub:oai:DiVA.org:liu-45705"
 

Search: onr:"swepub:oai:DiVA.org:liu-45705" > Radiation resistanc...

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist
  • Strokan, N.B.Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation (author)

Radiation resistance of transistor- and diode-type SiC detectors irradiated with 8-MeV protons

  • Article/chapterEnglish2004

Publisher, publication year, extent ...

  • Pleiades Publishing Ltd,2004
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:liu-45705
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-45705URI
  • https://doi.org/10.1134/1.1777605DOI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ~10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ~30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 × 1013 cm-2, in this case, the resolution is =10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ˜3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 × 1014 cm-2. © 2004 MAIK "Nauka/Interperiodica".

Subject headings and genre

  • TECHNOLOGY
  • TEKNIKVETENSKAP

Added entries (persons, corporate bodies, meetings, titles ...)

  • Ivanov, A.M.Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation (author)
  • Savkina, N.S.Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation (author)
  • Lebedev, A.A.Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation (author)
  • Kozlovskii, V.V.Kozlovskii, V.V., St. Petersburg Polytech. University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russian Federation (author)
  • Syväjärvi, MikaelLinköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)miksy08 (author)
  • Yakimova, RositsaLinköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)rosia15 (author)
  • Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian FederationKozlovskii, V.V., St. Petersburg Polytech. University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russian Federation (creator_code:org_t)

Related titles

  • In:Semiconductors (Woodbury, N.Y.): Pleiades Publishing Ltd38:7, s. 807-8111063-78261090-6479

Internet link

Find in a library

To the university's database

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view