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Dissociation of V-Ga-O-N complexes in HVPE GaN by high pressure and high temperature annealing
- Tuomisto, F (author)
- Hautakangas, S (author)
- Makkonen, I (author)
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- Ranki, V (author)
- Puska, MJ (author)
- Saarinen, K (author)
- Bockowski, M (author)
- Suski, T (author)
- Xu, X (author)
- Look, DC (author)
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- (creator_code:org_t)
- Wiley, 2006
- 2006
- English.
- In: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 243:7, s. 1436-1440
- Journal article (peer-reviewed)
Abstract
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- We have used positron annihilation spectroscopy to study the high-pressure annealing induced thermal recovery of vacancy defects in free-standing GaN grown by hydride vapor phase epitaxy (HYPE). The results show that the in-grown Ga vacancy complexes recover after annealing at 1500-1700 K. Comparison of the experimental positron data with ab-initio calculations indicates that the Doppler broadening measurement of the electron momentum distribution is sensitive enough to distinguish between the N and O atoms surrounding the Ga vacancy. We show that the difference between the isolated V-Ga in electron irradiated GaN and the V-Ga-O-N complexes in highly O-doped GaN is clear, and the Ga vacancy related defect complexes that start dissociating at 1500 K can be identified as V-Ga-O-N pairs.
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- Hautakangas, S
- Makkonen, I
- Ranki, V
- Puska, MJ
- Saarinen, K
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- Bockowski, M
- Suski, T
- Paskova, Tanja
- Monemar, Bo
- Xu, X
- Look, DC
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