Dissociation of V-Ga-O-N complexes in HVPE GaN by high pressure and high temperature annealing

We have used positron annihilation spectroscopy to study the high-pressure annealing induced thermal recovery of vacancy defects in free-standing GaN grown by hydride vapor phase epitaxy (HYPE). The results show that the in-grown Ga vacancy complexes recover after annealing at 1500-1700 K. Comparison of the experimental positron data with ab-initio calculations indicates that the Doppler broadening measurement of the electron momentum distribution is sensitive enough to distinguish between the N and O atoms surrounding the Ga vacancy. We show that the difference between the isolated V-Ga in electron irradiated GaN and the V-Ga-O-N complexes in highly O-doped GaN is clear, and the Ga vacancy related defect complexes that start dissociating at 1500 K can be identified as V-Ga-O-N pairs.

Hautakangas, S (author)
Makkonen, I (author)
Ranki, V (author)
Puska, MJ (author)
Saarinen, K (author)
Bockowski, M (author)
Suski, T (author)
Paskova, TanjaLinköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi(Swepub:liu)tanpa12 (author)
Monemar, BoLinköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)bomo46 (author)
Xu, X (author)
Look, DC (author)
Linköpings universitetTekniska högskolan (creator_code:org_t)

In:Physica status solidi. B, Basic research: Wiley243:7, s. 1436-14400370-19721521-3951

By the author/editor: Tuomisto, F; Hautakangas, S; Makkonen, I; Ranki, V; Puska, MJ; Saarinen, K; show more...; Bockowski, M; Suski, T; Paskova, Tanja; Monemar, Bo; Xu, X; Look, DC; show less...

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