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Pulsed EPR studies of phosphorus shallow donors in diamond and SiC

Isoya, J (author)
Katagiri, M (author)
Umeda, T (author)
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Koizumi, S (author)
Kanda, H (author)
Nguyen, Tien Son (author)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
Henry, Anne (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
Gali, Adam (author)
Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
Janzén, Erik (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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 (creator_code:org_t)
Elsevier BV, 2006
2006
English.
In: Physica B, Vols. 376-377. - : Elsevier BV. ; , s. 358-361
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • Phosphorus shallow donors having the symmetry lower than T-d are studied by pulsed EPR. In diamond:P and 3C-SiC:P, the symmetry is lowered to D-2d and the density of the donor wave function on the phosphorus atom exhibits a predominant p-character. In 4H-SiC:P with the site symmetry of C-3v, the A(1) ground state of the phosphorus donors substituting at the quasi-cubic site of silicon shows an axial character of the distribution of the donor wave function in the vicinity of the phosphorus atom. (c) 2005 Elsevier B.V. All rights reserved.

Keyword

pulsed EPR
donors
diamond
SiC
TECHNOLOGY
TEKNIKVETENSKAP

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