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Plasma-assisted MBE...
Plasma-assisted MBE growth and characterization of InN on sapphire
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Ivanov, SV (author)
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- Shubina, Tatiana (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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Jmerik, VN (author)
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Vekshin, VA (author)
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Kop'ev, PS (author)
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- Monemar, Bo (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- Elsevier BV, 2004
- 2004
- English.
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In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 269:1
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- We report on a close correlation between the growth conditions of InN/Al2O3 (0 0 0 1) epilayers grown by plasma-assisted molecular beam epitaxy (MBE), their optical properties in the IR range, and the In clustering in the layers. High-spatial resolution techniques, namely micro-cathodoluminesesence, back-scattered electron imaging and energy dispersive X-ray analysis, were used to establish this correlation. The In-rich growth conditions, achieved by increasing either the growth temperature or the effective In/N flux ratio, causes the In clustering in InN, responsible in our samples for the 0.7-0.8 eV luminescence and IR optical absorption. Growth under In/N = 1: 1 conditions slightly shifted to the N-rich side generally produces InN layers without visible In clusters, having an optical absorption edge around 1.4 eV. A possible mechanism of In cluster formation is suggested on the basis of thermodynamic considerations for InN MBE growth. (C) 2004 Elsevier B.V. All rights reserved.
Keyword
- growth models
- morphological stability
- optical spectroscopy
- molecular beam epitaxy
- InN
- semiconducting indium compounds
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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