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Optical and structu...
Optical and structural characteristics of virtually unstrained bulk-like GaN
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- Gogova, Daniela (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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Kasic, A (author)
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- Larsson, Henrik (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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Pecz, B (author)
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- Yakimova, Rositsa (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Magnusson, Björn (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Monemar, Bo (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Tuomisto, F (author)
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Saarinen, K (author)
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Miskys, C (author)
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Stutzmann, M (author)
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Bundesmann, C (author)
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Schubert, M (author)
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(creator_code:org_t)
- 2004
- 2004
- English.
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In: Japanese Journal of Applied Physics. - 0021-4922 .- 1347-4065. ; 43:4A, s. 1264-1268
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Bulk-like GaN with high structural and optical quality has been attained by hydride vapor-phase exitapy (HVPE). The as-grown 330 mum-thick GaN layer was separated from the sapphire substrate by a laser-induced lift-off process. The full width at half maximum values of the X-ray diffraction (XRD) omega-scans of the free-standing material are 96 and 129 arcsec for the (1 0 -1 4) and (0 0 0 2) reflection, respectively, which rank among the smallest values published so far for free-standing HVPE-GaN. The dislocation density determined by plan-view TEM images is 1-2 x 10(7) cm(-2). Positron annihilation spectroscopy studies show that the concentration of Ga vacancy related defects is about 1.5 x 10(16) cm(-3). The high-resolution XRD, photoluminescence, mu-Raman, and infrared spectroscopic ellipsometry measurements consistently prove that the free-standing material is of high crystalline quality and virtually strain-free. Therefore it is suitable to serve as a substrate for stress-free growth of high-quality III-nitrides based device heterostructures.
Keyword
- GaN
- HVPE
- bulk-like
- optical and structural characteristics
- stress-free
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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To the university's database
- By the author/editor
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Gogova, Daniela
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Kasic, A
-
Larsson, Henrik
-
Pecz, B
-
Yakimova, Rosits ...
-
Magnusson, Björn
-
show more...
-
Monemar, Bo
-
Tuomisto, F
-
Saarinen, K
-
Miskys, C
-
Stutzmann, M
-
Bundesmann, C
-
Schubert, M
-
show less...
- Articles in the publication
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Japanese Journal ...
- By the university
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Linköping University