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Scanning spreading resistance microscopy of aluminum implanted 4H-SiC
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- Osterman, J. (author)
- Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden
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- Abtin, L. (author)
- Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden
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- Zimmermann, U. (author)
- Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden
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- 2003
- 2003
- English.
- In: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 102:1-3, s. 128-131
- Conference paper (other academic/artistic)
Abstract
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- Results from the application of scanning spreading resistance microscopy (SSRM) for characterization of aluminum implanted 4H-SiC are presented. The implanted profiles are investigated electrically and morphologically as a function of post-implantation anneal conditions. The method is shown to be advantageous for measuring and optimizing the activation in many aspects with respect to existing alternative techniques: it provides information of the entire depth and Al concentration range, it is unaffected by annealing induced re-growth and/or surface roughening, and requires little sample preparation. The results indicate that the apparent activation and surface roughness do not saturate in the investigated temperature range of 1500-1650 °C. Finally, an apparent activation energy for the process of 3 eV is estimated. © 2003 Elsevier B.V. All rights reserved.
Keyword
- Activation
- Implantation
- Silicon carbide
- SSRM
- TECHNOLOGY
- TEKNIKVETENSKAP
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- kon (subject category)
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