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Phonon-assisted exc...
Phonon-assisted exciton luminescence in GaN layers grown by MBE and chloride-hydride VPE
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- Tkachman, M.G. (author)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation
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- Shubina, T.V. (author)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation
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- Jmerik, V.N. (author)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation
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- Ivanov, S.V. (author)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation
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- Kop'ev, P.S. (author)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation
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- Paskova, Tanja (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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- Monemar, Bo (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Ioffe Physicotechnical Institute, Russian Academy of Sciences, St Petersburg 194021, Russian Federation Tekniska högskolan (creator_code:org_t)
- Pleiades Publishing Ltd, 2003
- 2003
- English.
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In: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 37:5, s. 532-536
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Optical properties of GaN layers grown by the molecular-beam epitaxy (MBE) and chloride-hydride vapor-phase epitaxy (CHVPE) have been studied, and the quality of two types of samples has been compared. The photoluminescence spectra have an excitonic nature for both types of layers. To determine precisely the nature of exciton transitions, the reflectance spectra were studied. A key point was the investigation of phonon-assisted exciton luminescence, which provides information on the density distribution of the exciton states. Temperature dependences of the exciton transition energy and the ratio of intensities of one- and two-phpnon replicas were studied. The high quality of both types of layers has been confirmed, though the concentration of acceptors in MBE-grown samples is higher than in CHVPE samples. © 2003 MAIK "Nauka/Interperiodica".
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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