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n-type Si/SiGe reso...
n-type Si/SiGe resonant tunnelling diodes
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- Paul, D.J. (author)
- Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom
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- See, P. (author)
- Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom
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- Zozoulenko, Igor (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för teknik och naturvetenskap
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- Berggren, Karl-Fredrik (author)
- Linköpings universitet,Tekniska högskolan,Teoretisk Fysik
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- Hollander, B. (author)
- Holländer, B., Institut Für Schicht und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
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- Mantl, S. (author)
- Institut Für Schicht und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
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- Griffin, N. (author)
- National Microelectronics Research Centre, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland
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- Coonan, B.P. (author)
- National Microelectronics Research Centre, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland
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- Redmond, G. (author)
- National Microelectronics Research Centre, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland
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- Crean, G.M. (author)
- National Microelectronics Research Centre, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland
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(creator_code:org_t)
- 2002
- 2002
- English.
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In: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 89:1-3, s. 26-29
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- Resonant tunnelling diodes (RTDs) have been fabricated using Si/SiGe heterolayers which demonstrate room temperature performance comparable to III-V technology. Peak current densities up to 282 kA cm-2 with peak-to-valley current ratios (PVCRs) of 2.4 have been demonstrated at room temperature in devices with dimensions of 5 × 5 µm2. Scaling the device size demonstrates that the peak current density is inversely proportional to the device area. It is suggested that this is related to thermal limitations in the device structure. Estimates are also produced for the maximum frequency of oscillations of the diodes which suggest that oscillators may operate with speeds comparable to III-V diodes. © 2002 Elsevier Science B.V. All rights reserved.
Keyword
- Electronic device
- Germanium
- Quantum effects
- Silicon
- Tunnelling
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- vet (subject category)
- kon (subject category)
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- By the author/editor
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Paul, D.J.
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See, P.
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Zozoulenko, Igor
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Berggren, Karl-F ...
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Hollander, B.
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Mantl, S.
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show more...
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Griffin, N.
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Coonan, B.P.
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Redmond, G.
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Crean, G.M.
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- Articles in the publication
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Materials Scienc ...
- By the university
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Linköping University