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Early stages of oxygen clustering in hydrogenated Cz-Si : IR absorption studies
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- Murin, L.I. (author)
- Institute of Solid State and Semiconductor Physics, P. Brovki Street 17, 220072 Minsk, Belarus
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- Markevich, V.P. (author)
- Institute of Solid State and Semiconductor Physics, P. Brovki Street 17, 220072 Minsk, Belarus
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- Suezawa, M. (author)
- Institute for Materials Research, Tohoku University, Sendai 980-77, Japan
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- Hallberg, T. (author)
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- Institute of Solid State and Semiconductor Physics, P Brovki Street 17, 220072 Minsk, Belarus Institute for Materials Research, Tohoku University, Sendai 980-77, Japan (creator_code:org_t)
- 2001
- 2001
- English.
- In: Physica. B, Condensed matter. - 0921-4526 .- 1873-2135. ; 302-303, s. 180-187
- Conference paper (other academic/artistic)
Abstract
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- The formation kinetics of small oxygen clusters in hydrogenated Si has been studied by means of infrared absorption measurements. Hydrogen was introduced into the crystals by in-diffusion from H2 gas at 1200-1300°C. The samples were heated at temperatures in the range of 280-370°C for different durations. At initial stages of heat-treatment, enormous generation rates of the oxygen dimer have been observed in hydrogenated samples. This indicates highly enhanced diffusion of the interstitial oxygen atoms. The maximum achievable concentration of the dimers is found to be limited by their dissociation rate even at temperatures of about 300°C, while in as-grown crystals the capture processes are known to be dominant in this temperature region. An explanation of this phenomenon is presented. © 2001 Published by Elsevier Science B.V.
Keyword
- Hydrogen
- Infrared absorption spectroscopy
- Oxygen clustering
- Silicon
- NATURAL SCIENCES
- NATURVETENSKAP
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- kon (subject category)
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- Markevich, V.P.
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- Lindstrom, J.L.
- Kleverman, M.
- Hallberg, T.
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- Linköping University
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