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Si/SiGe electron resonant tunneling diodes with graded spacer wells
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- Paul, D.J. (author)
- Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE, United Kingdom
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- See, P. (author)
- Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE, United Kingdom
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- Bates, R. (author)
- Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE, United Kingdom
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- Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE, United Kingdom Natl Microlectron. Research Centre, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland (creator_code:org_t)
- AIP Publishing, 2001
- 2001
- English.
- In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 78:26, s. 4184-4186
- Journal article (peer-reviewed)
Abstract
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- Resonant tunneling diodes have been fabricated using graded Si1 - xGex (x = 0.3?0.0) spacer wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.7Ge0.3 n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08 A/cm2 with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. © 2001 American Institute of Physics.
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