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Impact of MOCVD-GaN...
Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
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Valcheva, E. (author)
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- Paskova, Tanja (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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- Abrashev, M.V. (author)
- Faculty of Physics, Sofia University, 5, J. Bourchier blvd., Sofia 1164, Bulgaria
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- Persson, Per (author)
- Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
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- Paskov, Plamen (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Goldys, E.M. (author)
- Semiconductor Science and Technology Laboratories, Macquarie University, Sydney, NSW 2109, Australia
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- Beccard, R. (author)
- Aixtron AG, D-52072 Aachen, Germany
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- Heuken, M. (author)
- Aixtron AG, D-52072 Aachen, Germany
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- Monemar, Bo (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- 2001
- 2001
- English.
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In: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 82:1-3, s. 35-38
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN 'template' layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-sectional micro-Raman measurements, cathodoluminescence and transmission electron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier concentration (< 1017 cm-3) as well as a significant strain relaxation effect. © 2001 Elsevier Science B.V.
Keyword
- Doping distribution
- GaN
- HVPE
- Strain
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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