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Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes
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- Hansson, Göran (author)
- Linköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik
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- Ni, Wei-Xin (author)
- Linköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik
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- Du, Chun-Xia (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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- Duteil, F. (author)
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- (creator_code:org_t)
- AIP Publishing, 2001
- 2001
- English.
- In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 78:15, s. 2104-2106
- Journal article (peer-reviewed)
Abstract
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- The temperature dependencies of the current-voltage characteristics and the electroluminescence (EL) intensity of molecular beam epitaxy grown Er/O-doped Si light emitting diodes at reverse bias have been studied. To minimize the scattering of electrons injected from the p-doped Si1-xGex electron emitters, an intrinsic Si layer was used in the depletion region. For many diodes, there is a temperature range where the EL intensity increases with temperature. Data are reported for a structure that shows increasing intensity up to 100°C. This is attributed to an increasing fraction of the pumping current being due to phonon-assisted tunneling, which gives a higher saturation intensity, compared to ionization-dominated breakdown at lower temperatures. © 2001 American Institute of Physics.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
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- art (subject category)
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