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Comparison between ...
Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGex Schottky contacts prepared by co-sputtering and thermal reaction
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- Ouacha, H. (author)
- Physics Department, Chalmers University of Technology, University of Gothenburg, S-412 96 Gothenburg, Sweden
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- Nur, O. (author)
- Physics Department, Chalmers University of Technology, University of Gothenburg, S-412 96 Gothenburg, Sweden
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- Fu, Y. (author)
- Physics Department, Chalmers University of Technology, University of Gothenburg, S-412 96 Gothenburg, Sweden
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- Willander, M. (author)
- Physics Department, Chalmers University of Technology, University of Gothenburg, S-412 96 Gothenburg, Sweden
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Ouacha, A. (author)
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- Turan, R. (author)
- Physics Department, Middle East Technical University, 06531 Ankara, Turkey
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(creator_code:org_t)
- 2001-03-14
- 2001
- English.
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In: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 16:4, s. 255-259
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The noise properties of Pt/p-Si1-xGex and PtSi/p-Si1-xGex (x = 0.14) Schottky contacts have been studied. The silicide layer PtSi was formed by thermal reaction (TR) of Pt with a silicon substrate and by co-sputtering (CS) of Pt and Si onto the strained Si1-xGex layer. The noise measurements were performed at temperature T = 77 K over the frequency range 10-104 Hz. Higher noise level was observed in the annealed diode Pt/p-Si1-xGex. In both diodes, the noise was found to exhibit 1/f behaviour and was attributed to fluctuations of the generation-recombination current at the interface states. The results reveal significant reductions in the total noise by 70%, and the interface state density Nit by three orders of magnitude when the silicide is formed by the CS process.
Keyword
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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