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Strain relaxation o...
Strain relaxation of low-temperature deposited epitaxial titanium-carbide films
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- Hogberg, H. (författare)
- Högberg, H., Department of Inorganic Chemistry, Angstrom Lab., Uppsala Univ., P.O., Uppsala, Sweden
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- Birch, Jens (författare)
- Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
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Johansson, M P (författare)
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- Jansson, U. (författare)
- Department of Inorganic Chemistry, Angstrom Lab., Uppsala Univ., P.O., Uppsala, Sweden
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- Hultman, Lars (författare)
- Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
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Högberg, H, Department of Inorganic Chemistry, Angstrom Lab., Uppsala Univ., P.O., Uppsala, Sweden Tekniska högskolan (creator_code:org_t)
- 2000
- 2000
- Engelska.
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Ingår i: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 219:3, s. 237-244
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The lattice misfit strain and relaxation during growth of 60-950 angstroms epitaxial TiC carbide films deposited by co-evaporation of C60 and Ti on MgO(0 0 1) have been studied by reciprocal space mapping (RSM) and transmission electron microscopy (TEM). All the films exhibited a strained layer growth behavior with respect to the substrate. The strain e, ranged from 2.1% for the 60 angstroms film to 0.8% for the 950 angstroms film. Initial misfit strain relaxation was by slip on {1 1 0}<1 0 1¯> and {1 1 1}<1 0 1¯>. After dislocation rearrangement the films predominantly exhibited well-developed misfit dislocations of edge type with line direction <1 0 0> along the interface plane and Burgers vectors 1/2[1 0 1¯] inclined to the interface with MgO.
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
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