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Sublimation epitaxy...
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Beshkova, MilenaLinköpings universitet,Tekniska högskolan,Halvledarmaterial
(author)
Sublimation epitaxy of AlN layers grown by different conditions on 4H-SiC substrates
- Article/chapterEnglish2007
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Numbers
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LIBRIS-ID:oai:DiVA.org:liu-48035
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-48035URI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Epitaxial layers of aluminium nitride were grown at temperature 2100 degrees C on 10X10 mm(2) 4H-SiC substrates via a sublimation-recondensation method in an RF heated graphite furnace. The source material was polycrystalline sintered AIN. Growths of AIN layers in vacuum and pure nitrogen at 20 mbar were compared. MA maximum growth rate of 70 mu m/h was achieved in a pure N-2 atmosphere. The surface morphology reveals the hexagonal symmetry of the seeds, suggesting an epitaxial growth. This was confirmed by High-Resolution X-Ray Diffraction. The spectra showed a strong and well defined (0002) reflection positioned at 36.04 degrees in a symmetric theta-2 theta scan for both samples. Micro-Raman spectroscopy revealed that the films had a wurtzite structure. Rutherford Backscattering Spectrometry indicated the quality with a relative chi(min) parameter 0.68.
Subject headings and genre
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AlN
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sublimation epitaxy
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HRXRD
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RBS
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TECHNOLOGY
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TEKNIKVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
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Grigorov, K. G.
(author)
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Zakhariev, Z.
(author)
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Abrashev, M.
(author)
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Massi, M.
(author)
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Yakimova, RositsaLinköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)rosia15
(author)
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Linköpings universitetTekniska högskolan
(creator_code:org_t)
Related titles
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In:Journal of Optoelectronics and Advanced Materials9:1, s. 213-2161454-41641841-7132
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