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Observation of vaca...
Observation of vacancy clusters in HTCVD grown SiC
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Aavikko, R (author)
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Saarinen, K (author)
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- Magnusson, Björn (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Janzén, Erik (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- 2005
- 2005
- English.
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In: Materials Science Forum, Vols. 483-485. ; , s. 469-472
- Related links:
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https://urn.kb.se/re...
Abstract
Subject headings
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- Positron lifetime spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapor deposition (HTCVD). The measured positron lifetime spectra can be decomposed into two components, of which the longer corresponds to vacancy clusters. We have carried out atomic superposition calculations to estimate the size of these clusters.
Keyword
- SiC
- HTCVD
- positron
- vacancy cluster
- atomic superposition
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
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