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High Field Effect M...
High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
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Sveinbjornsson, EO (author)
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Olafsson, HO (author)
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Gudjonsson, G (author)
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Allerstam, F (author)
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- Nilsson, Patrik (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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- Syväjärvi, Mikael (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Yakimova, Rositsa (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Hallin, Christer (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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Rodle, T (author)
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Jos, R (author)
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(creator_code:org_t)
- 2005
- 2005
- English.
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In: Materials Science Forum, Vols. 483-485. ; , s. 841-844
- Related links:
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https://urn.kb.se/re...
Abstract
Subject headings
Close
- We report on fabrication and characterization of n-channel Si face 4H-SiC MOSFETs made using sublimation grown epitaxial material. Transistors made on this material exhibit record-high peak field effect mobility of 208 cm(2)/Vs while reference transistors made on a commercial epitaxial material grown by chemical vapor deposition (CVD) show field effect mobility of 125 cm(2)/VS. The mobility enhancement is attributed to better surface morphology of the sublimation grown epitaxial layer.
Keyword
- MOSFET
- field effect mobility
- sublimation growth
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
To the university's database
- By the author/editor
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Sveinbjornsson, ...
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Olafsson, HO
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Gudjonsson, G
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Allerstam, F
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Nilsson, Patrik
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Syväjärvi, Mikae ...
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show more...
-
Yakimova, Rosits ...
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Hallin, Christer
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Rodle, T
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Jos, R
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show less...
- Articles in the publication
- Materials Scienc ...
- By the university
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Linköping University