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Hall effect data an...
Hall effect data analysis of GaN n(+)n structures
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Arnaudov, B (author)
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- Paskova, Tanja (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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Evtimova, S (author)
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Heuken, M (author)
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- Monemar, Bo (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- 2002
- 2002
- English.
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In: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 234:3, s. 872-876
- Related links:
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https://urn.kb.se/re...
Abstract
Subject headings
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- We develop a model for analysis of Hall effect data of GaN structures composed of sublayers with different thicknesses and contacts placed on the top surface, We analysed the contributions of the conductivity of every sublayer of a planar sample taking into account the fact that the sample sublayers are partially connected in parallel to each other by series resistances formed in areas lying below the contacts from the upper layer. Correction factors, which reduce the contribution of the underlying layers to the measured whole sample conductivity, are obtained from the equations relevant to the respective equivalent circuit.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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