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Vacancies in As-gro...
Vacancies in As-grown and electron-irradiated 4H-SiC epilayers investigated by positron annihilation
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Dannefaer, S (author)
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Avalos, V (author)
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- Syväjärvi, Mikael (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Yakimova, Rositsa (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- 2003
- 2003
- English.
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In: Materials Science Forum, Vols. 433-436. ; , s. 173-176
- Related links:
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https://urn.kb.se/re...
Abstract
Subject headings
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- Epilayers of 4H-SiC were investigated by positron annihilation spectroscopies: four epilayers and their substrates were investigated. The epilayers (47 to 220 mum thick) contained significantly lower grown-in vacancy concentration than did their substrates, and there was no dependency on layer thickness. Upon electron irradiation silicon vacancies were introduced at the same rate in epilayer and in substrate.
Keyword
- epilayer
- positron annihilation
- SiC
- vacancies
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
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