Vacancies in As-grown and electron-irradiated 4H-SiC epilayers investigated by positron annihilation

• Epilayers of 4H-SiC were investigated by positron annihilation spectroscopies: four epilayers and their substrates were investigated. The epilayers (47 to 220 mum thick) contained significantly lower grown-in vacancy concentration than did their substrates, and there was no dependency on layer thickness. Upon electron irradiation silicon vacancies were introduced at the same rate in epilayer and in substrate.

Keyword

epilayer

positron annihilation

SiC

vacancies

TECHNOLOGY

TEKNIKVETENSKAP

Publication and Content Type

ref (subject category)

kon (subject category)